Sn-doped polyhedral In{sub 2}O{sub 3} particles: Synthesis, characterization, and origins of luminous emission in wide visible range
- School of Materials Science and Engineering, Hefei University of Technology, 193 Tunxi Road, Hefei, Anhui 230009 (China)
Sn-doped octahedronal and tetrakaidecahedronal In{sub 2}O{sub 3} particles were successfully synthesized by simple thermal evaporation of indium grains using SnO as dopant. Structural characterization results demonstrated that the Sn-doped tetrakaidecahedronal In{sub 2}O{sub 3} particle had additional six {l_brace}001{r_brace} crystal surfaces compared with the octahedronal one. The luminous properties of both samples were characterized by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. A broad visible luminous emission around 570 nm was observed. Studies revealed that the emission consisted of three peaks of 511 nm, 564 nm, and 622 nm, which were attributed to radioactive recombination centers such as single ionized oxygen vacancy, indium interstitial, and antisite oxygen, respectively. We believe that the Sn donor level plays an important role in the visible luminous emission. - Graphical abstract: With more oxygen vacancies and tin doping. ITO particles can exhibit a better CL performance. Sn donor level near the conduction band edge plays an important role in luminous emission in wide visible range. Highlights: Black-Right-Pointing-Pointer Polyhedral ITO particles synthesized by thermal evaporation using SnO as dopant. Black-Right-Pointing-Pointer Broad visible luminous emission around 570 nm. Black-Right-Pointing-Pointer Sn donor level plays an important role in the visible emission. Black-Right-Pointing-Pointer ITO particles with more oxygen vacancies have better CL performance in visible range.
- OSTI ID:
- 21612909
- Journal Information:
- Journal of Solid State Chemistry, Vol. 186; Other Information: DOI: 10.1016/j.jssc.2011.11.019; PII: S0022-4596(11)00622-0; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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