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Title: Implication of Structural Disorder in The Charge Transport Properties of Cobalt-phthalocyanine Thin Films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3606221· OSTI ID:21608119
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  1. Technical Physics Division, Bhabha Atomic Research Center, Mumbai 400 085 (India)

The charge transport properties of 100 nm thick cobalt phthalocyanine (CoPc) films grown on single crystal Al{sub 2}O{sub 3}(0001 oriented) and quartz substrates using molecular beam epitaxy, have been investigated as a function of applied bias ({+-} 50 V) at room temperature. Films grown on Al{sub 2}O{sub 3} are highly ordered and exhibited non-hysteretic current-voltage (J-V) characteristics. On the other hand, films grown on quartz substrates are highly disordered and exhibited hysteretic J-V characteristics due to charge trapping. The analysis of J-V characteristics of films on Al{sub 2}O{sub 3} substrates show that the transport is governed by shallow trap mediated space charge limited conduction (SCLC), while for the films grown on the quartz substrate transport is through the exponentially distributed traps mediated SCLC. X-ray photoelectron spectroscopy data show that charge trapping centers in the films grown on quartz substrates are created by chemisorbed oxygen.

OSTI ID:
21608119
Journal Information:
AIP Conference Proceedings, Vol. 1349, Issue 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606221; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English