Injection photodiodes based on low-resistivity ZnS single crystals

Journal Article · Tue Dec 15 00:00:00 EST 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609130181· OSTI ID:21562378

Losev, V. V., E-mail: [e-mail] ^[1]

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1. Moscow State Institute (Technical University) of Electronic Engineering (Russian Federation)

Results of an experimental study of Ni-n-n{sup +}-In photodiode structures fabricated from a low-resistivity ZnS:Al crystal (n{sup +}-region) are reported. The high-resistivity compensated n-type layer is produced by thermal diffusion of silver. The photodiodes exhibit an injection amplification of the photocurrent under a forward bias of 1-10 V. The dependence of the currents through the diodes on the thickness of the n-type layer in the dark and under UV irradiation is determined. The photosensitivity is at a maximum in the fundamental absorption range in a narrow spectral band.

• OSTI ID: 21562378
• Journal Information: Semiconductors, Vol. 43, Issue 13; Other Information: DOI: 10.1134/S1063782609130181; Copyright (c) 2009 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
AMPLIFICATION
INJECTION
IRRADIATION
LAYERS
MONOCRYSTALS
PHOTODIODES
PHOTOSENSITIVITY
SILVER
THERMAL DIFFUSION
THICKNESS
ZINC SULFIDES
CHALCOGENIDES
CRYSTALS
DIFFUSION
DIMENSIONS
ELEMENTS
INORGANIC PHOSPHORS
INTAKE
METALS
PHOSPHORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SENSITIVITY
SORPTION
SULFIDES
SULFUR COMPOUNDS
TRANSITION ELEMENTS
ZINC COMPOUNDS