Magnetoresistance in nanostructured Tb/Ti and Tb/Si multilayers

Journal Article · Sat Jan 15 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3544043· OSTI ID:21538050

Svalov, A V; Kurlyandskaya, G V ^[1]; Vas'kovskiy, V O; Sorokin, A N ^[2]; Diercks, D ^[3]

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1. Dpto. Electricidad y Electronica, Universidad del Pais Vasco (UPV-EHU), 48080 Bilbao (Spain)
2. Ural State University A.M. Gorky, 620083 Ekaterinburg (Russian Federation)
3. Center for Advanced Research and Technology, University of North Texas, Denton, Texas 76203-5017 (United States)

Magnetic, magnetoresistive and structural properties were studied for [Tb/Ti]{sub n} and [Tb/Si]{sub n} multilayers which were prepared by rf-sputtering. The thickness of the Tb layers varied from 1.5 to 12 nm. The thickness of 2 nm nonmagnetic spacers of Ti or Si was kept constant. Both anisotropic and isotropic magnetoresistance was observed in [Tb/Ti]{sub n} and [Tb/Si]{sub n} multilayers. A decrease in the thickness of the terbium layers led to a decrease in the anisotropic contribution to the total magnetoresistance. The negative isotropic magnetoresistanse in [Tb/Ti]{sub n} and [Tb/Si]{sub n} multilayers can be attributed to the giant magnetoresistance (GMR) and/or high field isotropic magnetoresistance. The structure of the samples of both types enabled the existence of the GMR effect.

• OSTI ID: 21538050
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 2; Other Information: DOI: 10.1063/1.3544043; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANISOTROPY
CRYSTAL STRUCTURE
DEPOSITION
ELECTROMAGNETIC FIELDS
INTERACTIONS
LAYERS
MAGNETORESISTANCE
MATERIALS
NANOSTRUCTURES
SILICON
SPUTTERING
TERBIUM
THICKNESS
TITANIUM
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
METALS
PHYSICAL PROPERTIES
RARE EARTHS
SEMIMETALS
TRANSITION ELEMENTS