Bulk Dislocation Core Dissociation Probed by Coherent X Rays in Silicon

Journal Article · Fri Feb 11 00:00:00 EST 2011 · Physical Review Letters

DOI:https://doi.org/10.1103/PHYSREVLETT.106.065502· OSTI ID:21532304

Jacques, V L. R.; Pinsolle, E ^[1]; Ravy, S; Sauvage-Simkin, M ^[2]; Le Bolloc'h, D ^[1]; Livet, F ^[3]

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1. Laboratoire de Physique des Solides (CNRS-UMR 8502), Bat. 510, Universite Paris-sud, 91405 Orsay cedex (France)
2. Synchrotron SOLEIL, L'Orme des merisiers, Saint-Aubin BP 48, 91192 Gif-sur-Yvette cedex (France)
3. Sciences et Ingenierie des Materiaux et Procedes, INP Grenoble CNRS UJF, BP 75, 38402 St Martin d'Heres Cedex (France)

We report on a new approach to probe bulk dislocations by using coherent x-ray diffraction. Coherent x rays are particularly suited for bulk dislocation studies because lattice phase shifts in condensed matter induce typical diffraction patterns which strongly depend on the fine structure of the dislocation cores. The strength of the method is demonstrated by performing coherent diffraction of a single dislocation loop in silicon. A dissociation of a bulk dislocation is measured and proves to be unusually large compared to surface dislocation dissociations. This work opens a route for the study of dislocation cores in the bulk in a static or dynamical regime, and under various external constraints.

• OSTI ID: 21532304
• Journal Information: Physical Review Letters, Vol. 106, Issue 6; Other Information: DOI: 10.1103/PhysRevLett.106.065502; (c) 2011 American Institute of Physics; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
DISSOCIATION
FINE STRUCTURE
PHASE SHIFT
SILICON
SURFACES
X RADIATION
X-RAY DIFFRACTION
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELEMENTS
IONIZING RADIATIONS
LINE DEFECTS
RADIATIONS
SCATTERING
SEMIMETALS