A large angle convergent beam electron diffraction study of the core nature of dislocations in 3{ital C}-SiC
- Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7204 (United States)
Dislocations produced by 1300{degree}C indentation of the silicon-terminated (111) face of 3{ital C}-SiC were investigated by transmission electron microscopy. They were all found to be either widely separated partial dislocation pairs, or else, arrays of single partial dislocation half-loops on neighboring parallel slip planes and having the same Burgers vector. It was concluded that in the latter case, each array consisted of {ital leading} partial dislocations which had nucleated without accompanying trailing partial dislocations. The core nature of both dissociated dislocations and arrays of single partial dislocations has been determined by the technique of large angle convergent beam electron diffraction. The results indicate that the core of all single partial dislocation half-loops constituting an array consists of silicon atoms. It is concluded that, with the present deformation geometry, the Si-core partial dislocations are preferentially nucleated before the C-core partial dislocations. In the case of a dissociated dislocation, when a pair of partials was present, electron microscopy observations showed that the morphology of the two partial dislocations was very different; while the Si-core partials were smooth, the C-core partial dislocations had a zig-zag morphology. {copyright} {ital 1996 Materials Research Society.}
- OSTI ID:
- 280124
- Journal Information:
- Journal of Materials Research, Vol. 11, Issue 4; Other Information: PBD: Apr 1996
- Country of Publication:
- United States
- Language:
- English
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