Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)
We report on the thermal boundary conductance across structurally-variant GaSb/GaAs interfaces characterized by different dislocations densities, as well as variably-rough Al/GaSb interfaces. The GaSb/GaAs structures are epitaxially grown using both interfacial misfit (IMF) and non-IMF techniques. We measure the thermal boundary conductance from 100 to 450 K with time-domain thermoreflectance. The thermal boundary conductance across the GaSb/GaAs interfaces decreases with increasing strain dislocation density. We develop a model for interfacial transport at structurally-variant interfaces in which phonon propagation and scattering parallels photon attenuation. We find that this model describes the measured thermal boundary conductances well.
- OSTI ID:
- 21518395
- Journal Information:
- Applied Physics Letters, Vol. 98, Issue 16; Other Information: DOI: 10.1063/1.3581041; (c) 2011 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ATTENUATION
DENSITY
DISLOCATIONS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
PHONONS
PHOTONS
SCATTERING
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
THERMAL CONDUCTIVITY
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BOSONS
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
LINE DEFECTS
MASSLESS PARTICLES
MATERIALS
METALS
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
TEMPERATURE RANGE
THERMODYNAMIC PROPERTIES