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Title: Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3581041· OSTI ID:21518395
;  [1]; ; ; ;  [2];  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  2. Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)

We report on the thermal boundary conductance across structurally-variant GaSb/GaAs interfaces characterized by different dislocations densities, as well as variably-rough Al/GaSb interfaces. The GaSb/GaAs structures are epitaxially grown using both interfacial misfit (IMF) and non-IMF techniques. We measure the thermal boundary conductance from 100 to 450 K with time-domain thermoreflectance. The thermal boundary conductance across the GaSb/GaAs interfaces decreases with increasing strain dislocation density. We develop a model for interfacial transport at structurally-variant interfaces in which phonon propagation and scattering parallels photon attenuation. We find that this model describes the measured thermal boundary conductances well.

OSTI ID:
21518395
Journal Information:
Applied Physics Letters, Vol. 98, Issue 16; Other Information: DOI: 10.1063/1.3581041; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English