Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

Chisholm, Matthew F.; Fernandez-Delgado, N.; Herrera, M.; Kamarudin, M. A.; Zhuang, Q. D.; Hayne, M.; Molina, S. I.

doi:10.1007/s10853-016-0051-0

Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

Journal Article · Tue May 17 00:00:00 EDT 2016 · Journal of Materials Science

DOI:https://doi.org/10.1007/s10853-016-0051-0· OSTI ID:1263886

Chisholm, Matthew F. ^[1]; Fernandez-Delgado, N. ^[2]; Herrera, M. ^[2]; Kamarudin, M. A. ^[3]; Zhuang, Q. D. ^[4]; Hayne, M. ^[4]; Molina, S. I. ^[2]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of Cadiz, Cadiz (Spain)
Lancaster Univ., Lancaster (United Kingdom); Univ. Putra Malaysia, Selangor Darul Ehsan (Malaysia)
Lancaster Univ., Lancaster (United Kingdom)

The structural quality of GaSb/GaAs quantum dots (QDs) has been analyzed at atomic scale by aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. In particular, we have studied the misfit dislocations that appear because of the high-lattice mismatch in the heterostructure. Our results have shown the formation of Lomer dislocations not only at the interface between the GaSb QDs and the GaAs substrate, but also at the interface with the GaAs capping layer, which is not a frequent observation. The analysis of these dislocations points to the existence of chains of dislocation loops around the QDs. The dislocation core of the observed defects has been characterized, showing that they are reconstructed Lomer dislocations, which have less distortion at the dislocation core in comparison to unreconstructed ones. As a result, strain measurements using geometric phase analysis show that these dislocations may not fully relax the strain due to the lattice mismatch in the GaSb QDs.

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 1263886

Journal Information:: Journal of Materials Science, Journal Name: Journal of Materials Science Journal Issue: 16 Vol. 51; ISSN 0022-2461

Publisher:: Springer

Country of Publication:: United States

Language:: English

References (33)

GaSb film growth on GaAs substrate by MBE Li, Lin; Liu, Guo-jun; Wang, Yong Asia-Pacific Optical Communications, SPIE Proceedings https://doi.org/10.1117/12.635146	conference	November 2005
Column-by-column compositional mapping by Z-contrast imaging Molina, S. I.; Sales, D. L.; Galindo, P. L. Ultramicroscopy, Vol. 109, Issue 2 https://doi.org/10.1016/j.ultramic.2008.10.008	journal	January 2009
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs Balakrishnan, G.; Tatebayashi, J.; Khoshakhlagh, A. Applied Physics Letters, Vol. 89, Issue 16 https://doi.org/10.1063/1.2362999	journal	October 2006
Z -contrast imaging of dislocation cores at the GaAs/Si interface Lopatin, S.; Pennycook, S. J.; Narayan, J. Applied Physics Letters, Vol. 81, Issue 15 https://doi.org/10.1063/1.1511808	journal	October 2002
Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots Lozano, J. G.; Sánchez, A. M.; García, R. Applied Physics Letters, Vol. 91, Issue 7 https://doi.org/10.1063/1.2770776	journal	August 2007
Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy Vajargah, S. Hosseini; Couillard, M.; Cui, K. Applied Physics Letters, Vol. 98, Issue 8 https://doi.org/10.1063/1.3551626	journal	February 2011
High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate Kim, Y. H.; Lee, J. Y.; Noh, Y. G. Applied Physics Letters, Vol. 90, Issue 24 https://doi.org/10.1063/1.2747674	journal	June 2007
High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy Conversion Schaller, R. D.; Klimov, V. I. Physical Review Letters, Vol. 92, Issue 18 https://doi.org/10.1103/PhysRevLett.92.186601	journal	May 2004
Progress in Infrared Photodetectors Since 2000 Downs, Chandler; Vandervelde, Thomas Sensors, Vol. 13, Issue 4 https://doi.org/10.3390/s130405054	journal	April 2013
In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III–V compounds Silveira, J. P.; Briones, F. Journal of Crystal Growth, Vol. 201-202 https://doi.org/10.1016/S0022-0248(98)01301-3	journal	May 1999
GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy Smakman, E. P.; Garleff, J. K.; Young, R. J. Applied Physics Letters, Vol. 100, Issue 14 https://doi.org/10.1063/1.3701614	journal	April 2012
Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy Hÿtch, Martin J.; Putaux, Jean-Luc; Pénisson, Jean-Michel Nature, Vol. 423, Issue 6937 https://doi.org/10.1038/nature01638	journal	May 2003
Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials Jallipalli, A.; Balakrishnan, G.; Huang, S. H. Journal of Crystal Growth, Vol. 303, Issue 2 https://doi.org/10.1016/j.jcrysgro.2006.12.032	journal	May 2007
GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response Laghumavarapu, R. B.; Moscho, A.; Khoshakhlagh, A. Applied Physics Letters, Vol. 90, Issue 17 https://doi.org/10.1063/1.2734492	journal	April 2007
The impact of the initial surface reconstruction on heteroepitaxial film growth and defect formation Bickel, J. E.; Millunchick, J. Mirecki Physica Scripta, Vol. 89, Issue 7 https://doi.org/10.1088/0031-8949/89/7/075707	journal	June 2014
Quantitative measurement of displacement and strain fields from HREM micrographs Hÿtch, M. J.; Snoeck, E.; Kilaas, R. Ultramicroscopy, Vol. 74, Issue 3, p. 131-146 https://doi.org/10.1016/S0304-3991(98)00035-7	journal	August 1998
Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy Suzuki, K.; Hogg, R. A.; Arakawa, Y. Journal of Applied Physics, Vol. 85, Issue 12 https://doi.org/10.1063/1.370622	journal	June 1999
Strain effects and atomic arrangements of 60° and 90° dislocations near the ZnTe/GaAs heterointerface Kim, T. W.; Lee, D. U.; Lee, H. S. Applied Physics Letters, Vol. 78, Issue 10 https://doi.org/10.1063/1.1349866	journal	March 2001
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs Huang, S. H.; Balakrishnan, G.; Khoshakhlagh, A. Applied Physics Letters, Vol. 88, Issue 13 https://doi.org/10.1063/1.2172742	journal	March 2006
Interface structure of deposited GaSb on GaAs (001): Monte Carlo simulation and experimental study Fazouan, N.; Atmani, E.; El Kasri, F. Journal of Materials Science, Vol. 47, Issue 4 https://doi.org/10.1007/s10853-011-6018-2	journal	October 2011
A Pulsed Nonclassical Light Source Driven by an Integrated Electrically Triggered Quantum Dot Microlaser Munnelly, Pierce; Heindel, Tobias; Karow, Matthias M. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 21, Issue 6 https://doi.org/10.1109/JSTQE.2015.2418219	journal	November 2015
Antimony-Mediated Control of Misfit Dislocations and Strain at the Highly Lattice Mismatched GaSb/GaAs Interface Wang, Yi; Ruterana, Pierre; Chen, Jun ACS Applied Materials & Interfaces, Vol. 5, Issue 19 https://doi.org/10.1021/am4028907	journal	September 2013
Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy Kim, Joon-Hyung; Seong, Tae-Yeon; Mason, N. J. Journal of Electronic Materials, Vol. 27, Issue 5 https://doi.org/10.1007/s11664-998-0178-0	journal	May 1998
Identification of atomic steps at AlSb/GaAs hetero-epitaxial interface using geometric phase method by high-resolution electron microscopy He, X. Q.; Wen, C.; Duan, X. F. Materials Letters, Vol. 65, Issue 3 https://doi.org/10.1016/j.matlet.2010.10.054	journal	February 2011
Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM Mahalingam, Krishnamurthy; Haugan, Heather J.; Brown, Gail J. Ultramicroscopy, Vol. 127 https://doi.org/10.1016/j.ultramic.2012.09.005	journal	April 2013
Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates Noh, Y. K.; Hwang, Y. J.; Kim, M. D. Journal of the Korean Physical Society, Vol. 50, Issue 6 https://doi.org/10.3938/jkps.50.1929	journal	June 2007
Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells Carrington, Peter James; Mahajumi, Abu Syed; Wagener, Magnus C. Physica B: Condensed Matter, Vol. 407, Issue 10 https://doi.org/10.1016/j.physb.2011.09.069	journal	May 2012
Strain-induced Stranski–Krastanov three-dimensional growth mode of GaSb quantum dot on GaAs substrate Fu, K.; Fu, Y. Applied Physics Letters, Vol. 94, Issue 18 https://doi.org/10.1063/1.3132054	journal	May 2009
Control of anion incorporation in the molecular beam epitaxy of ternary antimonide superlattices for very long wavelength infrared detection Haugan, H. J.; Brown, G. J.; Elhamri, S. Journal of Crystal Growth, Vol. 425 https://doi.org/10.1016/j.jcrysgro.2015.03.008	journal	September 2015
Interfacial misfit array formation for GaSb growth on GaAs Huang, Shenghong; Balakrishnan, Ganesh; Huffaker, Diana L. Journal of Applied Physics, Vol. 105, Issue 10 https://doi.org/10.1063/1.3129562	journal	May 2009
A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition Zhou, W.; Tang, W.; Lau, K. M. Applied Physics Letters, Vol. 99, Issue 22 https://doi.org/10.1063/1.3663571	journal	November 2011
3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs Hernández-Saz, J.; Herrera, M.; Molina, S. I. Scripta Materialia, Vol. 103 https://doi.org/10.1016/j.scriptamat.2015.03.013	journal	July 2015
High-quality n-type aluminum gallium nitride thin films grown by interrupted deposition and in-situ thermal annealing Wang, Wei; Gan, Xuewei; Xu, Yang Materials Science in Semiconductor Processing, Vol. 30 https://doi.org/10.1016/j.mssp.2014.11.010	journal	February 2015

Similar Records

Nucleation of misfit and threading dislocations in GaSb/GaAs(001) heterostructure

Conference · Mon Dec 30 23:00:00 EST 1996 · OSTI ID:468936

Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

Journal Article · Fri Apr 22 00:00:00 EDT 2016 · Applied Surface Science · OSTI ID:1362248

Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors

Journal Article · Mon Oct 06 00:00:00 EDT 2014 · AIP Conference Proceedings · OSTI ID:22307941

Related Subjects

36 MATERIALS SCIENCE

Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

Citation Formats

References (33)

Similar Records

Related Subjects