Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors

Journal Article · Mon Oct 06 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4897672· OSTI ID:22307941

Ruterana, Pierre; Wang, Yi; Chen, Jun; Chauvat, Marie-Pierre ^[1]; El Kazzi, S.; Deplanque, L.; Wallart, X. ^[2]

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1. CIMAP, UMR 6252 CNRS, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex (France)
2. IEMN, UMR-CNRS 8520, CS 60069, 59652 Villeneuve d'Ascq Cedex (France)

A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained.

• OSTI ID: 22307941
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1618; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY
DISLOCATIONS
ELECTRON MICROSCOPY
ELECTRON MOBILITY
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INTERFACES
MOLECULAR DYNAMICS METHOD
PHASE STABILITY
TRANSISTORS