Naphthacene Based Organic Thin Film Transistor With Rare Earth Oxide

Journal Article · Wed Dec 01 00:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3530513· OSTI ID:21509962

Konwar, K ^[1]; Baishya, B ^[2]

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1. Department of Physics, Digboi College, Digboi-786171, Assam (India)
2. Department of Physics, Dibrugarh University, Dibrugarh-786004, Assam (India)

Naphthacene based organic thin film transistors (OTFTs) have been fabricated using La{sub 2}O{sub 3}, as the gate insulator. All the OTFTs have been fabricated by the process of thermal evaporation in vacuum on perfectly cleaned glass substrates with aluminium as source-drain and gate electrodes. The naphthacene film morphology on the glass substrate has been studied by XRD and found to be polycrystalline in nature. The field effect mobility, output resistance, amplification factor, transconductance and gain bandwidth product of the OTFTs have been calculated by using theoretical TFT model. The highest value of field effect mobility is found to be 0.07x10{sup -3} cm{sup 2}V{sup -1}s{sup -1} for the devices annealed in vacuum at 90 deg. C for 5 hours.

• OSTI ID: 21509962
• Journal Information: AIP Conference Proceedings, Vol. 1313, Issue 1; Conference: PEFM-2010: International conference on physics of emerging functional materials, Mumbai (India), 22-24 Sep 2010; Other Information: DOI: 10.1063/1.3530513; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ANNEALING
ELECTRODES
EVAPORATION
GAIN
GLASS
LANTHANUM OXIDES
MOBILITY
POLYCRYSTALS
RARE EARTH COMPOUNDS
SUBSTRATES
THIN FILMS
TRANSISTORS
X-RAY DIFFRACTION
AMPLIFICATION
CHALCOGENIDES
COHERENT SCATTERING
CRYSTALS
DIFFRACTION
ELEMENTS
FILMS
HEAT TREATMENTS
LANTHANUM COMPOUNDS
METALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
SCATTERING
SEMICONDUCTOR DEVICES