Thermoelectric properties of electrically stressed Sb/Bi-Sb-Te multilayered films

Journal Article · Mon Mar 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3326878· OSTI ID:21476172

Liao, Chien-Neng; Chang, Chih-Yu ^[1]; Chu, Hsu-Shen ^[2]

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1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
2. Thermal Management Materials and Device Laboratory, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China)

Electrically stressed Bi-Sb-Te thin films have demonstrated markedly enhanced Hall mobility and moderately reduced carrier concentration. To lower electrical resistivity further, a Sb-inserted Bi-Sb-Te multilayer structure was prepared through consecutively sputtering Bi-Sb-Te and Sb layers followed by electric current stressing. The electrically stressed Sb/Bi-Sb-Te film demonstrates high carrier concentration and enhanced Hall mobility. We propose that the additional Sb supply suppresses electromigration-induced Sb depletion in crystal lattices, thus maintains high carrier concentration of the Bi-Sb-Te film. The presented approach provides a simple means to optimize thermoelectric properties of Bi-Sb-Te films.

• OSTI ID: 21476172
• Journal Information: Journal of Applied Physics, Vol. 107, Issue 6; Other Information: DOI: 10.1063/1.3326878; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONIDES
BISMUTH TELLURIDES
CARRIER DENSITY
CARRIER MOBILITY
CRYSTAL LATTICES
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
HALL EFFECT
INTERMETALLIC COMPOUNDS
LAYERS
SPUTTERING
THERMOELECTRIC PROPERTIES
THIN FILMS
ALLOYS
ANTIMONY COMPOUNDS
BISMUTH COMPOUNDS
CHALCOGENIDES
CRYSTAL STRUCTURE
CURRENTS
ELECTRICAL PROPERTIES
FILMS
MOBILITY
PHYSICAL PROPERTIES
PNICTIDES
TELLURIDES
TELLURIUM COMPOUNDS