skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Formation mechanisms of metallic Zn nanodots by using ZnO thin films deposited on n-Si substrates

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3475016· OSTI ID:21466885
;  [1];  [2]; ;  [3];  [4]
  1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)
  2. Max Plank Institute of Microstructure Physics, D-06120 Halle (Saale) (Germany)
  3. Department of Electronics and Computer Engineering, National Research Laboratory for Nano Quantum Electronics Devices, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)
  4. Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

High-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy results showed that metallic Zn nanodots (NDs) were fabricated through transformation of ZnO thin films by deposition of SiO{sub x} on ZnO/n-Si (100) heterostructures. The Zn NDs with various sizes and densities were formed due to the occurrence of the mass diffusion of atoms along the grain boundaries in the ZnO thin films. The fabrication mechanisms of metallic Zn NDs through transformation of ZnO thin films deposited on n-Si substrates are described on the basis of the experimental results.

OSTI ID:
21466885
Journal Information:
Applied Physics Letters, Vol. 97, Issue 6; Other Information: DOI: 10.1063/1.3475016; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English

Similar Records

Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC
Journal Article · Wed Jul 15 00:00:00 EDT 2009 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films · OSTI ID:21466885

Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition
Journal Article · Mon Dec 07 00:00:00 EST 2015 · Applied Physics Letters · OSTI ID:21466885

Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique
Journal Article · Thu Jan 01 00:00:00 EST 2015 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films · OSTI ID:21466885