Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition

Journal Article · Mon Dec 07 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4936613· OSTI ID:22486189

Kuznetsov, Vladimir L.; Vai, Alex T.; Al-Mamouri, Malek; Stuart Abell, J. ^[1]; Pepper, Michael ^[2]

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1. Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT (United Kingdom)
2. Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE (United Kingdom)

Highly conducting (ρ = 3.9 × 10{sup −4} Ωcm) and transparent (83%) polycrystalline Si-doped ZnO (SiZO) thin films have been deposited onto borosilicate glass substrates by pulsed laser deposition from (ZnO){sub 1−x}(SiO{sub 2}){sub x} (0 ≤ x ≤ 0.05) ceramic targets prepared using a sol-gel technique. Along with their structural, chemical, and optical properties, the electronic transport within these SiZO samples has been investigated as a function of silicon doping level and temperature. Measurements made between 80 and 350 K reveal an almost temperature-independent carrier concentration consistent with degenerate metallic conduction in all of these samples. The temperature-dependent Hall mobility has been modeled by considering the varying contribution of grain boundary and electron-phonon scattering in samples with different nominal silicon concentrations.

• OSTI ID: 22486189
• Journal Information: Applied Physics Letters, Vol. 107, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BOROSILICATE GLASS
CARRIERS
CERAMICS
DOPED MATERIALS
ELECTRONS
ENERGY BEAM DEPOSITION
GRAIN BOUNDARIES
LASER RADIATION
POLYCRYSTALS
PULSED IRRADIATION
SILICON OXIDES
SOL-GEL PROCESS
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE MEASUREMENT
THIN FILMS
ZINC OXIDES