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Title: Improved crystalline properties of laser molecular beam epitaxy grown SrTiO{sub 3} by rutile TiO{sub 2} layer on hexagonal GaN

Abstract

Epitaxial SrTiO{sub 3} films were fabricated by laser molecular beam epitaxy on bare and TiO{sub 2} buffered GaN(0002), respectively. The whole deposition processes were in situ monitored by reflection high energy electron diffraction (RHEED). X-ray diffraction (XRD) was carried out to study the growth orientation and crystalline quality of STO films. The interfacial characters and epitaxial relationships were also investigated by high revolution transition electron microscope and selected area electron diffraction (SAED). According to the RHEED observation, the lowest epitaxy temperature of STO on TiO{sub 2} buffered GaN was decreased compared with the direct deposited one. The epitaxial relationship was (111)[110]STO//(0002)[1120]GaN in both cases as confirmed by RHEED, XRD, and SAED. The full width at half maximum of omega-scan and PHI-scan of STO on TiO{sub 2} buffered GaN was reduced compared with that deposited on bare GaN, indicating that epitaxial quality of STO film is improved by inserting TiO{sub 2} layer. In summary, the lattice mismatch was reduced by inserting rutile TiO{sub 2}. As a result, the crystalline temperature was reduced and enhanced epitaxial quality of STO thin film was obtained.

Authors:
; ; ; ; ;  [1]
  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)
Publication Date:
OSTI Identifier:
21361937
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 106; Journal Issue: 10; Other Information: DOI: 10.1063/1.3257259; (c) 2009 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL DEFECTS; CRYSTAL GROWTH; DEPOSITION; ELECTRON DIFFRACTION; ELECTRON MICROSCOPES; GALLIUM NITRIDES; LASER MATERIALS; MOLECULAR BEAM EPITAXY; RUTILE; SEMICONDUCTOR MATERIALS; STRONTIUM TITANATES; THIN FILMS; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; FILMS; GALLIUM COMPOUNDS; MATERIALS; MICROSCOPES; MICROSCOPY; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; RADIOACTIVE MATERIALS; RADIOACTIVE MINERALS; SCATTERING; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Citation Formats

Luo, W B, Zhu, J, Chen, H, Wang, X P, Zhang, Y, and Li, Y R. Improved crystalline properties of laser molecular beam epitaxy grown SrTiO{sub 3} by rutile TiO{sub 2} layer on hexagonal GaN. United States: N. p., 2009. Web. doi:10.1063/1.3257259.
Luo, W B, Zhu, J, Chen, H, Wang, X P, Zhang, Y, & Li, Y R. Improved crystalline properties of laser molecular beam epitaxy grown SrTiO{sub 3} by rutile TiO{sub 2} layer on hexagonal GaN. United States. https://doi.org/10.1063/1.3257259
Luo, W B, Zhu, J, Chen, H, Wang, X P, Zhang, Y, and Li, Y R. 2009. "Improved crystalline properties of laser molecular beam epitaxy grown SrTiO{sub 3} by rutile TiO{sub 2} layer on hexagonal GaN". United States. https://doi.org/10.1063/1.3257259.
@article{osti_21361937,
title = {Improved crystalline properties of laser molecular beam epitaxy grown SrTiO{sub 3} by rutile TiO{sub 2} layer on hexagonal GaN},
author = {Luo, W B and Zhu, J and Chen, H and Wang, X P and Zhang, Y and Li, Y R},
abstractNote = {Epitaxial SrTiO{sub 3} films were fabricated by laser molecular beam epitaxy on bare and TiO{sub 2} buffered GaN(0002), respectively. The whole deposition processes were in situ monitored by reflection high energy electron diffraction (RHEED). X-ray diffraction (XRD) was carried out to study the growth orientation and crystalline quality of STO films. The interfacial characters and epitaxial relationships were also investigated by high revolution transition electron microscope and selected area electron diffraction (SAED). According to the RHEED observation, the lowest epitaxy temperature of STO on TiO{sub 2} buffered GaN was decreased compared with the direct deposited one. The epitaxial relationship was (111)[110]STO//(0002)[1120]GaN in both cases as confirmed by RHEED, XRD, and SAED. The full width at half maximum of omega-scan and PHI-scan of STO on TiO{sub 2} buffered GaN was reduced compared with that deposited on bare GaN, indicating that epitaxial quality of STO film is improved by inserting TiO{sub 2} layer. In summary, the lattice mismatch was reduced by inserting rutile TiO{sub 2}. As a result, the crystalline temperature was reduced and enhanced epitaxial quality of STO thin film was obtained.},
doi = {10.1063/1.3257259},
url = {https://www.osti.gov/biblio/21361937}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 106,
place = {United States},
year = {Sun Nov 15 00:00:00 EST 2009},
month = {Sun Nov 15 00:00:00 EST 2009}
}