Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition
- Univ. of Texas, Austin, TX (United States)
- IBM Research Division, Yorktown Heights, NY (United States)
Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO3 (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO3 (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225 °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600 °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. In conclusion, the capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ~660 for the heterostructure.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Understanding Charge Separation and Transfer at Interfaces in Energy Materials (CST); Univ. of Texas, Austin, TX (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0001091
- OSTI ID:
- 1383359
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 8; Related Information: CST partners with University of Texas at Austin (lead); Sandia National Laboratories; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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