Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition

Ngo, Thong Q.; Posadas, Agham B.; McDaniel, Martin D.; Hu, Chengqing; Bruley, John; Yu, Edward T.; Demkov, Alexander A.; Ekerdt, John G.

doi:10.1063/1.4867469

Epitaxial c-axis oriented BaTiO₃ thin films on SrTiO₃-buffered Si(001) by atomic layer deposition

Journal Article · Mon Feb 24 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867469· OSTI ID:1383359

Ngo, Thong Q. ^[1]; Posadas, Agham B. ^[1]; McDaniel, Martin D. ^[1]; Hu, Chengqing ^[1]; Bruley, John ^[2]; Yu, Edward T. ^[1]; Demkov, Alexander A. ^[1]; Ekerdt, John G. ^[1]

Univ. of Texas, Austin, TX (United States)
IBM Research Division, Yorktown Heights, NY (United States)

Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO₃ (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO₃ (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225 °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600 °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. In conclusion, the capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ~660 for the heterostructure.

View Accepted Manuscript (DOE)

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Understanding Charge Separation and Transfer at Interfaces in Energy Materials (CST); Univ. of Texas, Austin, TX (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0001091

OSTI ID:: 1383359

Alternate ID(s):: OSTI ID: 22293116
OSTI ID: 1161335

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 104; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (11)

A review of molecular beam epitaxy of ferroelectric BaTiO ₃ films on Si, Ge and GaAs substrates and their applications Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V. Science and Technology of Advanced Materials, Vol. 16, Issue 3 https://doi.org/10.1088/1468-6996/16/3/036005	journal	June 2015
Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al ₂ O ₃ /Nb:SrTiO ₃ Moon, Taehwan; Lee, Hyun Jae; Kim, Keum Do Advanced Electronic Materials, Vol. 4, Issue 12 https://doi.org/10.1002/aelm.201800388	journal	September 2018
Ba _0.6 Sr _0.4 TiO ₃ Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors Tetsi, Emmanuel; Philippot, Gilles; Bord Majek, Isabelle physica status solidi (a), Vol. 215, Issue 23 https://doi.org/10.1002/pssa.201800478	journal	October 2018
High ferroelectric polarization in c -oriented BaTiO ₃ epitaxial thin films on SrTiO ₃ /Si(001) Scigaj, M.; Chao, C. H.; Gázquez, J. Applied Physics Letters, Vol. 109, Issue 12 https://doi.org/10.1063/1.4962836	journal	September 2016
Polarization retention in ultra-thin barium titanate films on Ge(001) Cho, Yujin; Ponath, Patrick; Zheng, Lu Applied Physics Letters, Vol. 112, Issue 16 https://doi.org/10.1063/1.5020549	journal	April 2018
Crystalline SrZrO ₃ deposition on Ge (001) by atomic layer deposition for high- k dielectric applications Hu, Shen; Ji, Li; Chen, Pei-Yu Journal of Applied Physics, Vol. 124, Issue 4 https://doi.org/10.1063/1.5026790	journal	July 2018
Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications Lin, Edward L.; Posadas, Agham B.; Zheng, Lu Journal of Applied Physics, Vol. 126, Issue 6 https://doi.org/10.1063/1.5087571	journal	August 2019
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Microstructure and ferroelectricity of BaTiO ₃ thin films on Si for integrated photonics Kormondy, Kristy J.; Popoff, Youri; Sousa, Marilyne Nanotechnology, Vol. 28, Issue 7 https://doi.org/10.1088/1361-6528/aa53c2	journal	January 2017
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