Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
- Department of Surface Technology, Korea Institute of Material Science, Changwon, Gyeongnam 641-831 (Korea, Republic of)
- Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of)
We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgO{sub x} and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgO{sub x} gate operates under low voltage write-erase (WR-ER) pulse of {+-}20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of {+-}70 V for WR and ER states. Both devices stably operated under visible illuminations.
- OSTI ID:
- 21294494
- Journal Information:
- Applied Physics Letters, Vol. 95, Issue 22; Other Information: DOI: 10.1063/1.3269576; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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