Uniaxial strain relaxation in He{sup +} ion implanted (110) oriented SiGe layers
- Institute of Bio and Nanosystems (IBN1-IT) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich, D-52425 Juelich (Germany)
- ST Microelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex (France)
- CEA-LETI, MINATEC, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France)
Uniaxially strained (011)Si is attractive for high performance p-channel metal oxide semiconductor field effect transistor devices due to the predicted high hole mobilities. Here, we demonstrate the realization of purely uniaxially relaxed (011) SiGe virtual substrates by He{sup +} ion implantation and thermal annealing. Perfect uniaxial relaxation is evidenced by precise ion channeling angular yield scan measurements and plan view transmission electron microscopy as predicted theoretically on the basis of the layer symmetry dependent dislocation dynamics. Strikingly, misfit dislocations propagate exclusively along the [011] direction in the (011) oriented crystal and, in contrast to (100)Si, no crosshatch is formed. We describe dislocation formation and propagation inducing strain relaxation of (011)SiGe and enlighten the differences to (100) oriented SiGe on Si.
- OSTI ID:
- 21294202
- Journal Information:
- Applied Physics Letters, Vol. 95, Issue 3; Other Information: DOI: 10.1063/1.3180279; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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