Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects

Journal Article · Mon Apr 13 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3120267· OSTI ID:21294014

Yang, X L; Zhu, W X; Wang, C D; Fang, H; Yu, T J; Yang, Z J; Zhang, G Y ^[1]; Qin, X B; Yu, R S; Wang, B Y ^[2]

---

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
2. Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

The vacancy-type defects in (Ga,Mn)N films grown by metal organic chemical vapor deposition were studied by positron annihilation technique. Doppler broadening spectra were measured for the films. Compared to the undoped GaN film, the positron trapping defects in the (Ga,Mn)N films have been changed to a new type defects and its concentration increases with the increasing Mn concentration. By analyzing the S-W correlation plots and our previous results, we identify this type defects in the (Ga,Mn)N as V{sub N}-Mn{sub Ga} complex. This type of defects should be considered when understand the magnetic properties in a real (Ga,Mn)N system.

• OSTI ID: 21294014
• Journal Information: Applied Physics Letters, Vol. 94, Issue 15; Other Information: DOI: 10.1063/1.3120267; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNIHILATION
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DOPPLER BROADENING
FERROMAGNETIC MATERIALS
GALLIUM NITRIDES
MAGNETIC PROPERTIES
MANGANESE NITRIDES
ORGANOMETALLIC COMPOUNDS
POSITRONS
SEMICONDUCTOR MATERIALS
THIN FILMS
VACANCIES