Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams

Journal Article · Tue Feb 15 04:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1845575· OSTI ID:20668197

Uedono, A; Chichibu, S F; Higashiwaki, M; Matsui, T; Ohdaira, T; Suzuki, R ^[1]

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1. Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

High-quality InN layers grown on sapphire substrates by plasma-assisted molecular-beam epitaxy were characterized using monoenergetic positron beams. The carrier concentrations of the films were controlled by Si doping (2.1x10{sup 18} to 1.4x10{sup 19} cm{sup -3}), and the highest obtained Hall mobility was 1300 cm{sup 2} V{sup -1} s{sup -1}. The Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons were measured as a function of the incident positron energy for undoped and Si-doped InN films. The line-shape parameter S increased with increasing carrier concentration, suggesting the introduction of vacancy-type defects by a Fermi-level effect. The major defect species were varied with carrier concentration, and its species were identified as In vacancies (V{sub In}) or their related defects.

• OSTI ID: 20668197
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNIHILATION
CARRIER LIFETIME
CARRIER MOBILITY
CHARGE CARRIERS
DOPED MATERIALS
DOPPLER BROADENING
ELECTRON DENSITY
FERMI LEVEL
HALL EFFECT
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
PLASMA
POSITRON BEAMS
POSITRONS
SAPPHIRE
SEMICONDUCTOR MATERIALS
SILICON
SPECTRA
THIN FILMS
VACANCIES