The Structure of Sapphire Implanted with Carbon at Room Temperature and 1000 deg. C
- Instituto Tecnologico e Nuclear, Sacavem, 2686-953 Portugal (Portugal)
- Institute Technical Physics and Materials Science, H-1525 Budapest (Hungary)
- University of Tennessee, Knoxville, TN 37996-0750 (United States)
Carbon was implanted into sapphire at various temperatures as part of a study of the different defect structures produced by a series of light ions. Implantations were made with 150 keV ions to fluences of 1x10{sup 16} and 1x10{sup 17} ions/cm{sup 2} at room temperature (RT) and 1000 deg. C. The defect structures were characterized using Rutherford backscattering-channeling (RBS-C) and transmission electron microscopy (TEM). The RBS-C spectra indicated low residual disorder for RT implantation at 1x10{sup 16} C{sup +}/cm{sup 2}. The de-channeling approached the random value at 1x10{sup 17} C{sup +}/cm{sup 2} and the TEM examination revealed a buried amorphous layer containing embedded sapphire nanocrystals. Damaged layers containing planar defects generally aligned parallel to the surface surrounded this layer. The RBS-C spectra for the sample implanted at 1000 deg. C with 1x10{sup 17} C{sup +}/cm{sup 2} suggested a highly damaged but crystalline surface that was confirmed by TEM micrographs.
- OSTI ID:
- 21289554
- Journal Information:
- AIP Conference Proceedings, Vol. 1099, Issue 1; Conference: CAARI 2008: 12. international conference on application of accelerators in research and industry, Fort Worth, TX (United States), 10-15 Aug 2008; Other Information: DOI: 10.1063/1.3120055; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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