ZnCdMgSe-Based Semiconductors for Intersubband Devices

Journal Article · Thu Nov 13 00:00:00 EST 2008 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3040255· OSTI ID:21254896

Tamargo, Maria C ^[1]

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1. Department of Chemistry, City College of New York Convent Avenue and 138th Street, New York, NY 10031 (United States)

This paper presents a review of recent results on the application of ZnCdMgSe-based wide bandgap II-VI compounds to intersubband devices such as quantum cascade lasers and quantum well infrared photodetectors operating in the mid-infrared region. The conduction band offset of ZnCdSe/ZnCdMgSe quantum well structures was determined from contactless electroreflectance measurements to be as high as 1.12 eV. FT-IR was used to measure intersubband absorption in multi-quantum well structures in the mid-IR range. Electroluminescence at 4.8 {mu}m was observed from a quantum cascade emitter structure made from these materials. Preliminary results are also presented on self assembled quantum dots of CdSe on ZnCdMgSe, and novel quantum well structures with metastable binary MgSe barriers.

• OSTI ID: 21254896
• Journal Information: AIP Conference Proceedings, Vol. 1077, Issue 1; Conference: Advanced summer school on physics 2008: Frontiers in contemporary physics, Mexico City (Mexico), 7-11 Jul 2008; Other Information: DOI: 10.1063/1.3040255; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
ABSORPTION
CADMIUM SELENIDES
ELECTROLUMINESCENCE
FOURIER TRANSFORMATION
INFRARED SPECTRA
LASERS
MAGNESIUM COMPOUNDS
PHOTODETECTORS
QUANTUM DOTS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
ZINC SELENIDES