In situ mid-infrared analyses of reactive gas-phase intermediates in TEOS/Ozone SAPCVD
- Xylaur enterprises, Fredericton, New Brunswick, E3B 6C2 (Canada)
In this report, we present in situ characterizations of chemical vapour deposition (CVD) reactors used in silicon dioxide thin film depositions. The characterizations are based on Fourier transform infrared spectroscopy. The infrared absorption data are interpreted within the context of process and thin film properties and the bearing of the spectroscopic data upon the chemical mechanisms extant in the deposition reaction. The relevance of the interpretations to real-time process control is discussed. The process under study in this work is TEOS/ozone-based deposition of silicon dioxide thin films at subatmospheric pressures. This process exhibits many desirable properties but has fundamental problems that may be solvable by reaction control based on in situ analyses and the real-time manipulation of reagent concentrations and process conditions. Herein we discuss our preliminary data on characterizations of TEOS/ozone chemistries in commercial reactor configurations. Reaction products and reactive intermediate species are detected and identified. Quantitative in situ measurements of the reagent materials are demonstrated. Preliminary correlations of these data with process and thin film properties are discussed.
- OSTI ID:
- 21202315
- Journal Information:
- AIP Conference Proceedings, Vol. 449, Issue 1; Conference: 1998 international conference on characterization and metrology for ULSI technology, Gaithersburg, MD (United States), 23-27 Mar 1998; Other Information: DOI: 10.1063/1.56832; (c) 1998 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate
Ultraviolet-induced deposition of SiO[sub 2] film from tetraethoxysilane spin-coated on Si