Ultraviolet-induced deposition of SiO[sub 2] film from tetraethoxysilane spin-coated on Si
- Tohoku Univ., Sendai (Japan). Research Inst. of Electrical Communication
- Chemitronics Co., Ltd., Tokyo (Japan)
The authors have previously proposed a method for depositing silicon dioxide films on Si from tetraethoxysilane Si(OC[sub 2]H[sub 5])[sub 4] (TEOS) using ultraviolet (UV) light from a low pressure mercury lamp. In the method, an organic solution which contains TEOS is spin-coated onto a Si wafer surface to form a thin organic film which is then exposed to the UV light to synthesize silicon dioxide. The photochemical reactions responsible for the oxide formation and the thermal properties of deposited films have been investigated using infrared (IR) and UV absorption spectroscopy and thermal desorption spectroscopy (TDS). IR and UV absorption data confirm that the UV light decomposes organic compounds in the spin-coated organic film to convert the film into a silicon dioxide film. The authors show that some photochemical reactions responsible for the decomposition of organic compounds are two-step processes. TDS data demonstrate that the deposited film is stable from substrate heating to approximately 400 C.
- OSTI ID:
- 7005276
- Journal Information:
- Journal of the Electrochemical Society; (United States), Vol. 141:6; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
SILANES
PHOTOCHEMICAL REACTIONS
SPIN-ON COATING
THERMODYNAMIC PROPERTIES
SILICON
SPIN-ON COATINGS
SILICON OXIDES
SYNTHESIS
ULTRAVIOLET RADIATION
CHALCOGENIDES
CHEMICAL REACTIONS
COATINGS
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
SEMIMETALS
SILICON COMPOUNDS
SURFACE COATING
360601* - Other Materials- Preparation & Manufacture
360606 - Other Materials- Physical Properties- (1992-)
400500 - Photochemistry