Gold-implanted shallow conducting layers in polymethylmethacrylate
- Polytechnic School, University of Sao Paulo, Avenida Professor Luciano Gualberto, Travessa R-158, CEP 05508-900 Sao Paulo, S.P. (Brazil)
- Institute of Physics, University of Sao Paulo, C.P. 66318, CEP 05315-970 Sao Paulo, S.P. (Brazil)
- Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
PMMA (polymethylmethacrylate) was ion implanted with gold at very low energy and over a range of different doses using a filtered cathodic arc metal plasma system. A nanometer scale conducting layer was formed, fully buried below the polymer surface at low implantation dose, and evolving to include a gold surface layer as the dose was increased. Depth profiles of the implanted material were calculated using the Dynamic TRIM computer simulation program. The electrical conductivity of the gold-implanted PMMA was measured in situ as a function of dose. Samples formed at a number of different doses were subsequently characterized by Rutherford backscattering spectrometry, and test patterns were formed on the polymer by electron beam lithography. Lithographic patterns were imaged by atomic force microscopy and demonstrated that the contrast properties of the lithography were well maintained in the surface-modified PMMA.
- OSTI ID:
- 21190100
- Journal Information:
- Journal of Applied Physics, Vol. 105, Issue 6; Other Information: DOI: 10.1063/1.3088874; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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