Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

Journal Article · Sun Mar 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3093700· OSTI ID:21190086

Tasco, V; Campa, A; Tarantini, I; Passaseo, A ^[1]; Gonzalez-Posada, F; Munoz, E ^[2]; Redondo-Cubero, A ^[2]; Lorenz, K; Franco, N ^[3]

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1. National Nanotechnology Laboratory of CNR-INFM, via Arnesano, 73100 Lecce (Italy)
2. ISOM and DIE, ETSI Telecomunicacion, Universidad Politecnica de Madrid, E-28040 Madrid (Spain)
3. Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953 Sacavem (Portugal)

The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template.

• OSTI ID: 21190086
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 6; Other Information: DOI: 10.1063/1.3093700; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
DEPOSITION
GALLIUM NITRIDES
ION BEAMS
LAYERS
MORPHOLOGY
NUCLEATION
SEMICONDUCTOR MATERIALS
THIN FILMS
X-RAY DIFFRACTION