Formation and origin of the dominating electron trap in irradiated p-type silicon

Journal Article · Fri Aug 15 00:00:00 EDT 2008 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.78.085205· OSTI ID:21143631

Vines, Lasse; Monakhov, E V; Kuznetsov, A Yu; Svensson, B G ^[1]; Kozlowski, R; Kaminski, P ^[2]

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1. Department of Physics/Physical Electronics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)
2. Institute of Electronic Materials Technology, PL-01919 Warsaw (Poland)

Deep level transient spectroscopy and minority-carrier transient spectroscopy (MCTS) have been applied to study electron-irradiated and proton-irradiated p-type Si samples with boron concentrations in the range of 6x10{sup 13}-2x10{sup 15} cm{sup -3}. Both impurity-lean epitaxially grown samples and Czochralski grown samples have been investigated where some of the epitaxial samples were subjected to oxygenation prior to the irradiation in order to controllably vary the oxygen concentration. The MCTS measurements reveal a dominant electron trap at E{sub c}-0.25 eV, where E{sub c} is the conduction-band edge, commonly ascribed to a boron-interstitial oxygen-interstitial complex (B{sub i}O{sub i}). The amplitude of the level increases linearly with the irradiation dose and it anneals out at {approx}175 deg. C but shows, however, no correlation with the boron concentration. The level is dominant even at doping concentrations in the 10{sup 13} cm{sup -3} range and, irrespective of the oxygen concentration, the generation rate decreases by almost 50% as the boron concentration increases by a factor of {approx}30. Comparison with numerical modeling reveals that these results are not consistent with the commonly accepted model of defect reactions in irradiated p-type Si. Different reasons for this discrepancy are discussed, such as an incomplete defect reaction model and alternative identifications of the E{sub c}-0.25 eV level.

• OSTI ID: 21143631
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 78, Issue 8; Other Information: DOI: 10.1103/PhysRevB.78.085205; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON ADDITIONS
CARRIERS
COMPARATIVE EVALUATIONS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CZOCHRALSKI METHOD
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRON BEAMS
EPITAXY
IMPURITIES
INTERSTITIALS
OXYGEN
P-TYPE CONDUCTORS
PHYSICAL RADIATION EFFECTS
PROTON BEAMS
SEMICONDUCTOR MATERIALS
SILICON
SIMULATION
TRAPS