Surface and Thin Film Analysis during Metal Organic Vapour Phase Epitaxial Growth
- Universita di Roma 'Tor Vergata', Dipartimento di Fisica, Via della Ricerca Scienttifica 11-00133 Roma (Italy)
In-situ analysis of epitaxial growth is the essential ingredient in order to understand the growth process, to optimize growth and last but not least to monitor or even control the epitaxial growth on a microscopic scale. In MBE (molecular beam epitaxy) in-situ analysis tools existed right from the beginning because this technique developed from Surface Science technology with all its electron based analysis tools (LEED, RHEED, PES etc). Vapour Phase Epitaxy, in contrast, remained for a long time in an empirical stage ('alchemy') because only post growth characterisations like photoluminescence, Hall effect and electrical conductivity were available. Within the last two decades, however, optical techniques were developed which provide similar capabilities as in MBE for Vapour Phase growth. I will discuss in this paper the potential of Reflectance Anisotropy Spectroscopy (RAS) and Spectroscopic Ellipsometry (SE) for the growth of thin epitaxial semiconductor layers with zincblende (GaAs etc) and wurtzite structure (GaN etc). Other techniques and materials will be also mentioned.
- OSTI ID:
- 21064142
- Journal Information:
- AIP Conference Proceedings, Vol. 916, Issue 1; Conference: 13. international summer school on crystal growth, Park City, UT (United States), 5-11 Aug 2007; Other Information: DOI: 10.1063/1.2751925; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANISOTROPY
CUBIC LATTICES
ELECTRIC CONDUCTIVITY
ELECTRON DIFFRACTION
ELLIPSOMETRY
GALLIUM ARSENIDES
GALLIUM NITRIDES
HALL EFFECT
LAYERS
MOLECULAR BEAM EPITAXY
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
POTENTIALS
REFLECTION
SEMICONDUCTOR MATERIALS
SURFACES
THIN FILMS
VAPOR PHASE EPITAXY