Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

Journal Article · Mon Nov 13 00:00:00 EST 2006 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2401515· OSTI ID:20891834

Yokota, Katsuhiro; Yano, Yoshinori ^[1]; Miyashita, Fumiyoshi ^[2]

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1. Faculty of Engineering, Kansai University, Suita, Osaka, 564-8680 (Japan)
2. Faculty of Informatics, Kansai University, Takatsuki, Osaka, 569-1095 (Japan)

Thin TiO2 films were deposited on Si at a temperature of 600 deg. C by an ion beam assisted deposition (IBAD) method. The TiO2 films were annealed for 30 min in Ar at temperatures below 700 deg. C. The as-deposited TiO2 films had high permittivities such 200 {epsilon}o and consisted of crystallites that were not preferentially oriented to the c-axis but had an expanded c-axis. On the annealed TiO2 films, permittivities became lower with increasing annealing temperature, and crystallites were oriented preferentially to the (110) plane.

• OSTI ID: 20891834
• Journal Information: AIP Conference Proceedings, Vol. 866, Issue 1; Conference: IIT 2006: 16. international conference on ion implantation technology, Marseille (France), 11-16 Jun 2006; Other Information: DOI: 10.1063/1.2401515; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DEPOSITION
ION BEAMS
NITROGEN IONS
PERMITTIVITY
SILICON
THIN FILMS
TITANIUM OXIDES