Thermal annealing behavior of Si-DLC IBAD coatings
- Army Research Lab., Aberdeen Proving Ground, MD (United States). Weapons and Materials Research Directorate
Amorphous, 700 nm thick, diamond-like carbon coatings containing silicon (Si-DLC), formed by Ar+ ion beam assisted deposition (IBAD) on silicon substrates, were annealed in air at temperatures ranging from room temperature to 600 C for 30 minutes. RBS analysis showed that the composition of the films remained the same up to 200 C, but at higher temperatures the Si-DLC coatings began to oxidize at the outer surface of the coating, forming a surface layer of SiO{sub 2}. After in-air annealing at 600 C the coating had been completely converted to SiO{sub 2}, with no trace of carbon seen by RBS. FTIR spectra of the unannealed coatings showed a very broad mode typical of Si-DLC bonding as well as some absorption features associated with Si and SiO{sub 2}. Above 200 C the transmission mode shifted to higher frequencies which may be caused by the growth of SiO{sub 2} and the decrease of the Si-DLC film thickness. The room temperature ball-on-disk friction coefficient of the coating against a {1/2} in. diameter 440 C steel ball at 1 N load ranged from 0.2 for the original coating up to 0.5 after a 100{degree} anneal and returned to 0.2 after annealing at 200--400 C and fell to 0.12 after a 500 C exposure. The average Knoop microhardness (uncorrected for substrate effects) was 10 GPa (1,000 KHN) for coatings annealed at temperatures as high as 400 C. All coatings up to 500 C passed the qualitative Scotch Tape test.
- OSTI ID:
- 549810
- Report Number(s):
- CONF-961202-; ISBN 1-55899-342-8; TRN: IM9752%%33
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of Materials modification and synthesis by ion beam processing; Alexander, D.E. [ed.] [Argonne National Lab., IL (United States)]; Cheung, N.W. [ed.] [Univ. of California, Berkeley, CA (United States)]; Park, B. [ed.] [Georgia Inst. of Tech., Atlanta, GA (United States)]; Skorupa, W. [ed.] [Research Center Rossendorf, Inc., Dresden (Germany)]; PB: 748 p.; Materials Research Society symposium proceedings, Volume 438
- Country of Publication:
- United States
- Language:
- English
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