Improvement of nitrogen retained dose using ammonia as a precursor in nitrogen plasma immersion ion implantation of silicon
- Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)
The low nitrogen retained dose due to competition from oxygen coimplantation diminishes the efficacy of nitrogen plasma immersion ion implantation in silicon. In this work, we aim at improving the nitrogen retained dose by using ammonia as a precursor. Ammonia is introduced into the nitrogen plasma during plasma immersion ion implantation of silicon to improve the nitrogen reactivity and reduce the competition from oxygen in the residual vacuum. Our x-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy results indicate that the ammonia precursor can indeed improve the N retained dose effectively, and the hydrophilic properties of the surface change with different ammonia to nitrogen ratios.
- OSTI ID:
- 20723044
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 23, Issue 5; Other Information: DOI: 10.1116/1.1991870; (c) 2005 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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