Increasing the retained dose by plasma immersion ion implantation and deposition

Conference · Fri Jul 22 04:00:00 EDT 1994

OSTI ID:10196983

Anders, A; Anders, S; Brown, I G; Yu, Kin M

The retained dose of ions can be increased by Plasma Immersion Ion Implantation and Deposition (PIIID). A substrate is immersed in a metal or carbon plasma and a negative repetitively pulsed bias voltage is applied. During the pulses, an electric sheath is formed around the substrate and ions are accelerated through the sheath and implanted into the substrate. Direct and recoil ion implantation and sputtering take place during the pulses whereas low-energy deposition occurs between the pulses. The condensable plasma can be produced using a cathodic arc plasma source combined with a magnetic macroparticle filter. PIIID can be applied to perform fast high-dose implantations or to deposit thin films with broad intermixing at the film-substrate interface. The bias voltage duty cycle can be tuned to sputter away the film deposited during pulse off-time (similar to the method of sacrificial layer). We have simulated the PIIID process using the Monte Carlo code T-DYN 4.0. This code allows a calculation of the dose-dependent depth profile for a process with deposition and implantation phases, taking sputtering into account. Predicted retained doses and experimentally obtained retained doses measured by Rutherford backscattering spectrometry are compared.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 10196983
• Report Number(s): LBL--35679; CONF-940731--3; ON: DE95003423
• Country of Publication: United States
• Language: English

Related Subjects

665300
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPUTERIZED SIMULATION
DOSE RATES
GOLD IONS
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
ION IMPLANTATION
MONTE CARLO METHOD
OPERATION
SILICON