Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP

Journal Article · Thu Sep 01 00:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2033143· OSTI ID:20714096

Barba, D; Salem, B; Morris, D; Aimez, V; Beauvais, J; Chicoine, M; Schiettekatte, F ^[1]

---

1. Centre de Recherche en Nanofabrication et en Nanocaracterisation, Universite de Sherbrooke, Sherbrooke, J1K 2R1 (Canada)

Photoluminescence, time-resolved photoluminescence, and Raman characterization techniques have been used to study In{sub 0.73}Ga{sub 0.27}As{sub 0.57}P{sub 0.43}/In{sub 0.53}Ga{sub 0.47}As/InP single quantum well heterostructure after 20-keV phosphorus ion implantation followed by rapid thermal annealing. The annealing process induces intermixing in the heterostructures and results in the blueshift of the quantum well peak emission. In order to investigate ion channeling effects on this band-gap tuning process, room-temperature implantations have been performed at tilt angles of 0 deg. and 7 deg. with respect to the sample (001)-growth axis. We show that the ion channeling increases the blueshift from 24 to 42 nm, while it reduces both the density of the nonradiative defects within the active layer and the structure disordering. These features are attributed to the nature of the damage generated by channeled ions. The band-gap increase observed in the sample implanted at 0 deg. is consistent with the formation of a compressive strain at the barrier/quantum well interface, whose intensity is measured by Raman spectroscopy.

• OSTI ID: 20714096
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 5; Other Information: DOI: 10.1063/1.2033143; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
ENERGY GAP
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INTERFACES
ION CHANNELING
ION IMPLANTATION
KEV RANGE 10-100
LAYERS
PHOSPHORUS IONS
PHOTOLUMINESCENCE
QUANTUM WELLS
RAMAN SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
TEMPERATURE RANGE 0273-0400 K
TIME RESOLUTION