Structural and magnetic properties of epitaxially grown MnAs films on GaAs(110)

Journal Article · Mon Aug 29 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2035328· OSTI ID:20709741

Kolovos-Vellianitis, D; Herrmann, C; Daeweritz, L; Ploog, K H ^[1]

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1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)

MnAs films were grown by molecular beam epitaxy (MBE) on GaAs(110) substrates, since this orientation was recently identified as promising for the increase of spin lifetimes in semiconductor heterojunctions, which is of interest in spin injection experiments. A single epitaxial orientation was revealed for the MnAs films which consist of both the ferromagnetic, hexagonal {alpha}-MnAs and the paramagnetic, orthorhombic {beta}-MnAs phase at room temperature. This phase coexistence could be imaged as a well ordered stripe pattern, whose periodicity depends on the film thickness. The study of the ferromagnetic properties shows a strong influence of the film thickness on the measured coercive fields and saturation magnetizations.

• OSTI ID: 20709741
• Journal Information: Applied Physics Letters, Vol. 87, Issue 9; Other Information: DOI: 10.1063/1.2035328; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COERCIVE FORCE
CRYSTAL GROWTH
FERROMAGNETIC MATERIALS
GALLIUM ARSENIDES
GRAIN ORIENTATION
HETEROJUNCTIONS
MAGNETIC PROPERTIES
MAGNETIZATION
MANGANESE ARSENIDES
MOLECULAR BEAM EPITAXY
PARAMAGNETISM
PERIODICITY
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THICKNESS
THIN FILMS