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Title: Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy

Abstract

Azimuthal reflection high-energy electron diffraction (ARHEED) and in situ grazing incidence synchrotron x-ray diffraction techniques are employed to investigate the growth, epitaxial orientation, and interfacial structure of MnAs layers grown on GaAs(001) by molecular beam epitaxy (MBE). We demonstrate the power and reliability of ARHEED scans as a routine tool in characterizing the formation of epitaxial films. The ARHEED scans clearly reveal the formation of the rectangular MnAs unit cell during growth on GaAs(001) for a MnAs layer thickness of 2.1 {+-} 0.2 monolayers with a tensile strain along the MnAs[1120] direction. A periodic coincidence site lattice, which is known to form along the MnAs [0001] direction to release the strain due to the huge lattice mismatch ({approx}30%) also produces periodic satellites of the diffraction spots in the ARHEED scan. The formation of different epitaxial orientations of MnAs during MBE growth can be directly observed using ARHEED scans. ARHEED is demonstrated to have a resolution similar to synchrotron x-ray diffraction with a double crystal monochromator, yielding full width at half maximum values of reflections as small as 0.005 reciprocal lattice units.

Authors:
; ; ;  [1]
  1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)
Publication Date:
OSTI Identifier:
22036663
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 110; Journal Issue: 2; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALS; ELECTRON DIFFRACTION; FILMS; GALLIUM ARSENIDES; INTERFACES; LATTICE PARAMETERS; LAYERS; MANGANESE ARSENIDES; MOLECULAR BEAM EPITAXY; ORIENTATION; PERIODICITY; REFLECTION; SEMICONDUCTOR MATERIALS; STRAINS; X-RAY DIFFRACTION

Citation Formats

Satapathy, Dillip K., Jenichen, Bernd, Ploog, Klaus H., and Braun, Wolfgang. Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy. United States: N. p., 2011. Web. doi:10.1063/1.3606469.
Satapathy, Dillip K., Jenichen, Bernd, Ploog, Klaus H., & Braun, Wolfgang. Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy. United States. doi:10.1063/1.3606469.
Satapathy, Dillip K., Jenichen, Bernd, Ploog, Klaus H., and Braun, Wolfgang. 2011. "Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy". United States. doi:10.1063/1.3606469.
@article{osti_22036663,
title = {Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy},
author = {Satapathy, Dillip K. and Jenichen, Bernd and Ploog, Klaus H. and Braun, Wolfgang},
abstractNote = {Azimuthal reflection high-energy electron diffraction (ARHEED) and in situ grazing incidence synchrotron x-ray diffraction techniques are employed to investigate the growth, epitaxial orientation, and interfacial structure of MnAs layers grown on GaAs(001) by molecular beam epitaxy (MBE). We demonstrate the power and reliability of ARHEED scans as a routine tool in characterizing the formation of epitaxial films. The ARHEED scans clearly reveal the formation of the rectangular MnAs unit cell during growth on GaAs(001) for a MnAs layer thickness of 2.1 {+-} 0.2 monolayers with a tensile strain along the MnAs[1120] direction. A periodic coincidence site lattice, which is known to form along the MnAs [0001] direction to release the strain due to the huge lattice mismatch ({approx}30%) also produces periodic satellites of the diffraction spots in the ARHEED scan. The formation of different epitaxial orientations of MnAs during MBE growth can be directly observed using ARHEED scans. ARHEED is demonstrated to have a resolution similar to synchrotron x-ray diffraction with a double crystal monochromator, yielding full width at half maximum values of reflections as small as 0.005 reciprocal lattice units.},
doi = {10.1063/1.3606469},
journal = {Journal of Applied Physics},
number = 2,
volume = 110,
place = {United States},
year = 2011,
month = 7
}
  • No abstract prepared.
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  • The heteroepitaxial growth of Fe films on GaN(0001) by molecular beam epitaxy is monitored in situ by reflection high-energy electron diffraction phi scans. The complex epitaxial orientation-relationship between Fe and GaN can be visualized by these phi scans already at an Fe coverage of two monolayers. By comparing the data to ex situ x-ray phi scans, we show that these measurements even allow a quantitative determination of the in-plane orientation-distribution of the heteroepitaxial film. The orientation-distribution is minimized for a growth temperature of 350 deg. C.
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