Highly photoconductive amorphous carbon nitride films prepared by cyclic nitrogen radical sputtering
- Department of Electrical Engineering, Gifu University, Yanaido 1-1, Gifu 501-1193 (Japan)
We report on the growth of amorphous carbon nitride films (a-CN{sub x}) showing the highest conductivity to date. The films were prepared using a layer-by-layer method (a-CN{sub x}:LL), by the cyclical nitrogen radical sputtering of a graphite radical, alternated with a brief hydrogen etch. The photosensitivity S of these films is 10{sup 5}, defined as the ratio of the photoconductivity {sigma}{sub p} to the dark conductivity {sigma}{sub d} and is the highest value reported thus far. We believe that the carriers generated by the monochromatic light (photon energy 6.2 eV) in the a-CN{sub x}:LL films are primarily electrons, with the photoconductivity shown to increase with substrate deposition temperature.
- OSTI ID:
- 20634317
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 14; Other Information: DOI: 10.1063/1.1792384; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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