Correlation of photothermal conversion on the photo-induced deformation of amorphous carbon nitride films prepared by reactive sputtering
- Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686 (Japan)
The photo-induced deformation of hydrogen-free amorphous carbon nitride (a-CN{sub x}) films was investigated under visible-light illumination. The films gave rise to photothermal conversion by irradiation. In this study, we investigated the effects of thermal energy generated by irradiation on the deformation of a-CN{sub x}/ultrathin substrate bimorph specimens. The films were prepared on both ultrathin Si and SiO{sub 2} substrates by reactive radio-frequency magnetron sputtering from a graphite target in the presence of pure nitrogen gas. The temperature of the film on the SiO{sub 2} substrate increased as the optical band-gap of the a-CN{sub x} was decreased. For the film on Si, the temperature remained constant. The deformation degree of the films on Si and SiO{sub 2} substrates were approximately the same. Thus, the deformation of a-CN{sub x} films primarily induced by photon energy directly.
- OSTI ID:
- 22314698
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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