On the role of energy deposition in triggering SEGR in power MOSFETs

Journal Article · Wed Dec 01 00:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819099· OSTI ID:20014691

Selva, L E; Swift, G M; Taylor, W A; Edmonds, L D

Single event gate rupture (SEGR) was studied using three types of power MOSFET devices with ions having incident linear energy transfers (LETs) in silicon from 26 to 82 MeV{center{underscore}dot}cm{sup 2}/mg. Results are: (1) consistent with Wrobel's oxide breakdown for V{sub DS} = 0 volts (for both normal incidence and angle); and (2) when V{sub GS} = 0 volts, energy deposited near the Si/SiO{sub 2} interface is more important than the energy deposited deeper in the epi.

• Research Organization: California Inst. of Tech., Pasadena, CA (US)
• OSTI ID: 20014691
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Vol. 46, Issue 6Pt1; Conference: 1999 IEEE Nuclear and Space Radiation Effects Conference, Norfolk, VA (US), 07/12/1999--07/16/1999; Other Information: PBD: Dec 1999; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
FAILURES
PHYSICAL RADIATION EFFECTS
MOSFET
LET
ENERGY ABSORPTION
IONS