Microhardness of silicon doped with isovalent or rare-earth impurities
Journal Article
·
· Inorganic Materials
OSTI ID:166675
- Belarussian State Univ., Minsk (Belarus)
- Novopolotsk Polytechnical Institute, Novopolotsk (Belarus)
When large-diameter silicon ingots are used in the production of semiconductor devices, severe requirements are imposed for the mechanical strength of the wafers produced. A convenient parameter for evaluating the mechanical strength is microhardness. Below, the authors report on a study of the microhardness of Czochralski-grown and floating-zone-grown silicon (Cz-Si and FZ-Si, respectively) doped with Er, Dy, and Ge, and of Si{sub 1-x}Ge{sub x} (x = 0.01-0.14) alloys.
- OSTI ID:
- 166675
- Journal Information:
- Inorganic Materials, Vol. 30, Issue 5; Other Information: PBD: May 1994; TN: Translated from Neorganicheskie Materialy; 30: No. 5, 599-602(1994)
- Country of Publication:
- United States
- Language:
- English
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