Growth of MoO3 films by oxygen plasma assisted molecular beam epitaxy
The growth of MoO₃ films on SrLaAlO₄(0 0 1), a substrate lattice-matched to b-MoO , by oxygen plasma assisted molecular beam epitaxy was characterized using reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy, Xray diffraction (XRD), and atomic force and scanning tunneling microscopies (AFM and STM).It was found that the flux of reactive oxygen species to the surface was not high enough to maintain the proper stoichiometry, even at the lowest measurable deposition rates. Therefore, the films were grown by depositing Mo in small increments and then allowing the Mo to oxidize. At 675 K, the films grew epitaxially but in a three-dimensional manner. XRD of films grown under these conditions revealed atetragonal structure that has not been previously observed in bulk MoO₃ samples.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 15011180
- Report Number(s):
- PNNL-SA-37910; THSFAP; KP1704020; TRN: US200504%%385
- Journal Information:
- Thin Solid Films, 414(2):205-215, Vol. 414, Issue 2; ISSN 0040-6090
- Country of Publication:
- United States
- Language:
- English
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