Admittance Spectroscopy in CZTSSe: Metastability Behavior and Voltage Dependent Defect Study

Conference · Mon Nov 21 00:00:00 EST 2016 · Conference Record of the IEEE Photovoltaic Specialists Conference

DOI:https://doi.org/10.1109/PVSC.2016.7750025· OSTI ID:1343670

Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

Admittance spectroscopy has been performed on a CZTSSe device with a carrier injection pretreatment and under electronically relaxed conditions to demonstrate metastability behavior. We show that the measurements with the carrier injection pretreatment demonstrate two admittance signatures while the relaxed measurement demonstrates only one admittance signature with a different activation energy. Additionally, voltage dependent admittance spectroscopy was performed using the carrier injection pretreatment method at each of the applied voltage bias. The activation energies of the two admittance signatures were calculated and are shown to be independent of the voltage bias.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1343670
• Report Number(s): NREL/CP-5J00-67950
• Journal Information: Conference Record of the IEEE Photovoltaic Specialists Conference, Vol. 2016; Conference: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, OR (United States), 5-10 Jun 2016; ISSN 0160-8371
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
thin-film solar cell
admittance spectroscopy
CZTSSe
defects
metastability
nanocrystal