Study of charge transport properties in a ZnO/CdS/Cu(In,Ga)Se2 solar cell via admittance spectroscopy
- Texas State Univ., San Marcos, TX (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Texas State Univ., San Marcos, TX (United States); National Cheng Kung Univ., Tainan City (Taiwan)
We investigate the charge carrier transport properties in a thin-film heterojunction Cu(In,Ga)Se2 (CIGS) solar cell device via coordinated capacitance-voltage and admittance spectroscopic measurements. The CIGS absorber width was measured using temperature dependent depletion width in the freeze-out regime and its acceptor density extracted from conventional capacitance-voltage analysis in the non-freeze-out regime. The bias-dependent modified dielectric relaxation in the Cu(In,Ga)Se2 solar cell was exploited to extract the absorber’s resistivity, hole mobility, and their temperature dependency, all by admittance spectroscopy. In the temperature range of 133 – 300 K, the extracted hole mobility in the CIGS device increases from 7.55 × 10-3 cm2/Vs to 4.08 cm2/Vs with temperature. The temperature dependent resistivity and mobility show Arrhenius behavior with an activation energy ≈ 120 meV. The thermally activated behavior of mobility is related to the potential fluctuation encountered by the holes during their transport, which enables admittance spectroscopy to directly measure the potential fluctuation in the CIGS polycrystalline material.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Texas State Univ., San Marcos, TX (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot Initiative; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- AC36-08GO28308; EE0007541
- OSTI ID:
- 1463078
- Alternate ID(s):
- OSTI ID: 1420350; OSTI ID: 1580434
- Report Number(s):
- NREL/JA-5K00-72062
- Journal Information:
- Journal of Vacuum Science and Technology B, Vol. 36, Issue 2; ISSN 2166-2746
- Publisher:
- American Vacuum Society/AIPCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Equivalent Circuit Model for Cu(In,Ga)Se2 Solar Cells Operating at Different Temperatures and Irradiance
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journal | November 2018 |
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