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Title: In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements

Journal Article · · IEEE Journal of Photovoltaics
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  1. Solar Energy Research Institute of Singapore (Singapore)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
+ Show Author Affiliations

Here, a temperature correction methodology for in-situ dark I-V(DIV) characterization of conventional p-type crystalline silicon photovoltaic (PV) modules undergoing potential-induced degradation (PID) is proposed.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1343086
Report Number(s):
NREL/JA-5J00-67339
Journal Information:
IEEE Journal of Photovoltaics, Vol. 7, Issue 1; ISSN 2156-3381
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 21 works
Citation information provided by
Web of Science

Cited By (1)

The Study On Anti-PID Performance Of High Efficiency Bifacial Cell Module journal August 2019

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Related Subjects

14 SOLAR ENERGY
temperature correction
in-situ dark I-V (DIV) characterization
module power temperature coefficient
photovoltaic (PV) modules
potential-induced degradation (PID)