Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-efficiency Systems

Conference · Mon May 18 00:00:00 EDT 2015

OSTI ID:1339430

Heidel, Timothy D. ^[1]; Henshall, David; Gradzki, pawel

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1. Dept. of Energy (DOE), Washington DC (United States). Advanced Research Projects Agency-Energy (ARPA-E)

Wide bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. However, today, they remain too costly relative to Si devices to gain ubiquitous adoption in many higher power applications. In 2014, ARPA-E launched a new research program entitled SWITCHES, that seeks to enable the development of high voltage (1200 V+), high current (100 A) single die power semiconductor devices that, upon ultimately reaching scale, have the potential to reach functional cost parity ($/A) with silicon power transistors while also offering breakthrough relative circuit performance (low losses, high switching frequencies, and high temperature operation).

• Research Organization: US Department of Energy (USDOE), Washington DC (United States). Advanced Research Projects Agency-Energy (ARPA-E)
• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• OSTI ID: 1339430
• Resource Relation: Conference: 2015 CS MANTECH Conference, Scottsdale, Arizona, 05/18/2015-05/21/2015
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Power Semiconductor Devices
Gallium Nitride (GaN)
Silicon Carbide (SiC)
Diamond
Bulk GaN Substrates