Directed vapor deposition of amorphous and polycrystalline electronic materials: Nonhydrogenated a-Si
Journal Article
·
· Journal of the Electrochemical Society
- Univ. of Virginia, Charlottesville, VA (United States)
A novel directed vapor deposition (DVD) process for creating amorphous and polycrystalline electronic materials is reported. Initial experimental results for DVD of nonhydrogenated a-Si indicate that growth rates at least between 0.02 and 1.0 {micro}m/min can be achieved. In this process, evaporated silicon is efficiently entrained in a previously formed low pressure supersonic He jet. The silicon is evaporated using a high energy, high voltage, electron beam. The collimated jet of He entrained with silicon is used to deposit thin films of a-Si at room temperature on glass substrates. Initial TEM microstructure analysis and optical absorption analysis is presented.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 131748
- Journal Information:
- Journal of the Electrochemical Society, Vol. 142, Issue 10; Other Information: PBD: Oct 1995
- Country of Publication:
- United States
- Language:
- English
Similar Records
Interfacial reactions between amorphous W-Si thin films and polycrystalline overlayers
Lithium phosphorous oxynitride films synthesized by a plasma-assisted directed vapor deposition approach
Formation of amorphous interlayers by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline Nb and Ta thin films on (111)Si
Conference
·
Tue Jan 01 00:00:00 EST 1985
·
OSTI ID:131748
Lithium phosphorous oxynitride films synthesized by a plasma-assisted directed vapor deposition approach
Journal Article
·
Tue Jan 15 00:00:00 EST 2008
· Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
·
OSTI ID:131748
Formation of amorphous interlayers by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline Nb and Ta thin films on (111)Si
Journal Article
·
Mon Jan 07 00:00:00 EST 1991
· Applied Physics Letters; (USA)
·
OSTI ID:131748