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Title: Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

Here, we present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.
Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [3] ;  [3] ;  [4] ;  [4] ;  [4] ;  [4] ;  [4] ;  [5] ;  [5]
  1. Aarhus Univ., Aarhus (Denmark)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. Univ. of Ferrara and INFN Section of Ferrara, Ferrara (Italy)
  5. California Polytechnic State Univ., San Luis Obispo, CA (United States)
Publication Date:
OSTI Identifier:
1260299
Report Number(s):
AC02-76SF00515
Journal ID: ISSN 2469-9888; PRABFM
Grant/Contract Number:
AC02-76SF00515; PHY-1068662
Type:
Published Article
Journal Name:
Physical Review Accelerators and Beams (Online)
Additional Journal Information:
Journal Name: Physical Review Accelerators and Beams (Online); Journal Volume: 19; Journal Issue: 7; Journal ID: ISSN 2469-9888
Publisher:
American Physical Society (APS)
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS