A study of Channeling, Volume Reflection and Volume Capture of 3.35 - 14.0 GeV Electrons in a bent Silicon Crystal

Journal Article · Thu Dec 03 00:00:00 EST 2015 · Physics Letters B

OSTI ID:1228738

Wistisen, T. N. ^[1]; Uggerhoj, U. I. ^[1]; Wienands, U. ^[2]; Markiewicz, T. W. ^[2]; Noble, R. J. ^[2]; Benson, B. L. ^[2]; Smith, T. ^[2]; Bagli, E. ^[3]; Bandiera, L. ^[3]; Germogli, G. ^[3]; Guidi, V. ^[3]; Mazzolari, A. ^[3]; Holtzapple, R. ^[4]; Tucker, S. ^[4]

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1. Aarhus Univ. (Denmark)
2. SLAC National Accelerator Lab., Menlo Park, CA (United States)
3. Univ. of Ferrara (Italy)
4. California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States)

We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasi-mosaic silicon crystal. Additionally, these phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5 and 14.0 GeV with a crystal with bending radius of 0.15m, corresponding to curvatures of 0.070, 0.088, 0.13, 0.22 and 0.29 times the critical curvature respectively. We have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission and the widths of the distribution of channeled particles parallel and orthogonal to the plane.

• Research Organization: SLAC National Accelerator Lab., Menlo Park, CA (United States)
• Sponsoring Organization: USDOE Office of Science (SC); National Science Foundation (NSF), Arlington, VA (United States); Danish Council for Independent Research, INFN (Denmark)
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 1228738
• Report Number(s): SLAC-PUB-16435
• Journal Information: Physics Letters B, Journal Name: Physics Letters B
• Country of Publication: United States
• Language: English

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