Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique

Roy, U. N.; Okobiah, O. K.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Egarievwe, S. U.; James, R. B.

doi:10.1016/j.jcrysgro.2015.12.017

Title: Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique

Journal Article · Tue Dec 29 00:00:00 EST 2015 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2015.12.017· OSTI ID:1438178

Roy, U. N. ^[1]; Okobiah, O. K. ^[2]; Camarda, G. S. ^[1]; Cui, Y. ^[1]; Gul, R. ^[2]; Hossain, A. ^[1]; Yang, G. ^[1]; Egarievwe, S. U. ^[2]; James, R. B. ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)

We grew Cd_1-xMn_xTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x10¹⁰ ohm-cm with a mobility-lifetime (μτ) product value for electrons of ~1.7x10^-3 cm²/V. An energy resolution of ~7.5% at 662 keV was achieved for a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation; Dept. of Homeland Security (DHS) (United States); Nuclear Regulatory Commission (NRC) (United States)

Grant/Contract Number:: SC0012704; 2012-DN-077-ARI065-03; NRC-27-10-514

OSTI ID:: 1438178

Alternate ID(s):: OSTI ID: 1251781

Report Number(s):: BNL-205682-2018-JAAM; PII: S0022024815007368

Journal Information:: Journal of Crystal Growth, Vol. 437; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 25 works

Citation information provided by
Web of Science

References (19)

Is the (Cd,Mn)Te crystal a prospective material for X-ray and ?-ray detectors? Mycielski, A.; Burger, A.; Sowinska, M. physica status solidi (c), Vol. 2, Issue 5 https://doi.org/10.1002/pssc.200460838	journal	March 2005
Vanadium-Doped Cadmium Manganese Telluride (Cd1−x Mn x Te) Crystals as X- and Gamma-Ray Detectors Hossain, A.; Cui, Y.; Bolotnikov, A. E. Journal of Electronic Materials, Vol. 38, Issue 8 https://doi.org/10.1007/s11664-009-0780-9	journal	April 2009
Vertical Bridgman growth and characterization of CdMnTe substrates for HgCdTe epitaxy Zhang, Jijun; Jie, Wanqi; Wang, Tao Journal of Crystal Growth, Vol. 310, Issue 13 https://doi.org/10.1016/j.jcrysgro.2008.03.024	journal	June 2008
Zinc and selenium co-doped CdTe substrates lattice matched to HgCdTe Tanaka, A.; Masa, Y.; Seto, S. Journal of Crystal Growth, Vol. 94, Issue 1 https://doi.org/10.1016/0022-0248(89)90615-5	journal	January 1989
Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors Kim, KiHyun; Jeng, Geunwoo; Kim, Pilsu Journal of Applied Physics, Vol. 114, Issue 6 https://doi.org/10.1063/1.4817869	journal	August 2013
New Approaches for Making Large-Volume and Uniform CdZnTe and CdMnTe Detectors Kim, K. H.; Bolotnikov, A. E.; Camarda, G. S. IEEE Transactions on Nuclear Science, Vol. 59, Issue 4 https://doi.org/10.1109/TNS.2012.2202917	journal	August 2012
Study of Te inclusions in CdMnTe crystals for nuclear detector applications Babalola, O. S.; Bolotnikov, A. E.; Groza, M. Journal of Crystal Growth, Vol. 311, Issue 14 https://doi.org/10.1016/j.jcrysgro.2009.04.037	journal	July 2009
Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector Du, Yuanyuan; Jie, Wanqi; Wang, Tao Journal of Crystal Growth, Vol. 318, Issue 1 https://doi.org/10.1016/j.jcrysgro.2010.11.086	journal	March 2011
Material and detector properties of cadmium manganese telluride (Cd1−Mn Te) crystals grown by the modified floating-zone method Hossain, A.; Gu, G. D.; Bolotnikov, A. E. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 784 https://doi.org/10.1016/j.nima.2014.12.060	journal	June 2015
Modified Bridgman growth of CdTe crystals Saucedo, E.; Rudolph, P.; Dieguez, E. Journal of Crystal Growth, Vol. 310, Issue 7-9 https://doi.org/10.1016/j.jcrysgro.2007.11.181	journal	April 2008
Twins in CdMnTe single crystals grown by Bridgman method Zhang, Jijun; Jie, Wanqi; Wang, Linjun Crystal Research and Technology, Vol. 45, Issue 1 https://doi.org/10.1002/crat.200900623	journal	January 2010
Fundamental studies on Bridgman growth of CdTe Rudolph, P. Progress in Crystal Growth and Characterization of Materials, Vol. 29, Issue 1-4 https://doi.org/10.1016/0960-8974(94)90009-4	journal	January 1994
Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects Bolotnikov, Aleksey E.; Babalola, Stephen; Camarda, Giuseppe S. IEEE Transactions on Nuclear Science, Vol. 57, Issue 2 https://doi.org/10.1109/TNS.2010.2042617	journal	April 2010
Crystal growth and characterization of CdTe grown by vertical gradient freeze Su, Ching-Hua; Lehoczky, S. L.; Raghothamachar, B. Materials Science and Engineering: B, Vol. 147, Issue 1 https://doi.org/10.1016/j.mseb.2007.11.005	journal	January 2008
The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by ‘contactless’ physical vapour transport Palosz, W.; Grasza, K.; Durose, K. Journal of Crystal Growth, Vol. 254, Issue 3-4 https://doi.org/10.1016/S0022-0248(03)01183-7	journal	July 2003
Characterisation of vapour grown CdZnTe crystals using synchrotron X-ray topography Egan, Christopher K.; Choubey, Ashutosh; Moore, Moreton Journal of Crystal Growth, Vol. 343, Issue 1 https://doi.org/10.1016/j.jcrysgro.2012.01.003	journal	March 2012
Compositional homogeneity and X-ray topographic analyses of CdTe Se1− grown by the vertical Bridgman technique Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S. Journal of Crystal Growth, Vol. 411 https://doi.org/10.1016/j.jcrysgro.2014.10.057	journal	February 2015
Evaluation of CdTexSe1−x crystals grown from a Te-rich solution Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S. Journal of Crystal Growth, Vol. 389 https://doi.org/10.1016/j.jcrysgro.2013.11.074	journal	March 2014
Structural, electrical, and optical properties of CdMnTe crystals grown by modified floating-zone technique Yang, Ge; Gu, Genda; Bolotnikov, Aleksey E. Electronic Materials Letters, Vol. 11, Issue 3 https://doi.org/10.1007/s13391-015-4261-4	journal	May 2015

Cited By (1)

Determining the sub-surface damage of CdTe single crystals after lapping Šik, O.; Škvarenina, L.; Caha, O. Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 11 https://doi.org/10.1007/s10854-018-9002-7	journal	March 2018

Similar Records

Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

Journal Article · Wed Feb 11 00:00:00 EST 2015 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment · OSTI ID:1438178

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; +7 more

Overcoming Mobility Lifetime Product Limitations in Vertical Bridgman Production of Cadmium Zinc Telluride Detectors

Journal Article · Wed Apr 10 00:00:00 EDT 2019 · Journal of Electronic Materials · OSTI ID:1438178

McCoy, Jedidiah J.; Kakkireni, Saketh; Gilvey, Zachary H.; +3 more

Gamma-ray spectroscopic characterization of long, rapidly-grown KSr₂I₅:Eu crystals

Journal Article · Thu Feb 27 00:00:00 EST 2020 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment · OSTI ID:1438178

Stand, L.; Zhuravleva, M.; Johnson, J.; +3 more

Related Subjects

36 MATERIALS SCIENCE
Characterization
Extended defects
Sub-grain boundary network
Bridgman
CdMnTe
Semiconducting II–VI materials

Title: Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique

Citation Formats

References (19)

Cited By (1)

Similar Records

Related Subjects