High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces
Journal Article
·
· Semiconductor Science and Technology
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- Grant/Contract Number:
- AR0000451
- OSTI ID:
- 1247432
- Journal Information:
- Semiconductor Science and Technology, Vol. 31, Issue 6; ISSN 0268-1242
- Publisher:
- IOP PublishingCopyright Statement
- Country of Publication:
- United Kingdom
- Language:
- English
Cited by: 14 works
Citation information provided by
Web of Science
Web of Science
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