Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.
Conference
·
OSTI ID:1244879
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Electricity (OE)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1244879
- Report Number(s):
- SAND2015-0073C; 558329
- Resource Relation:
- Conference: Proposed for presentation at the Electronic Materials and Applications 2015 held January 21-23, 2015 in Orlando, FL.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth and Band Offsets of MgO-CaO Alloys on GaN and AlGaN.
Epitaxial Growth and Performance of MgO-CaO Alloys for Gate Oxides on GaN and AlGaN.
Growth of Wide Band-gap Complex Oxides on GaN by Molecular-Beam Epitaxy.
Conference
·
Mon Jun 01 00:00:00 EDT 2015
·
OSTI ID:1244879
+8 more
Epitaxial Growth and Performance of MgO-CaO Alloys for Gate Oxides on GaN and AlGaN.
Conference
·
Thu Jan 01 00:00:00 EST 2015
·
OSTI ID:1244879
+5 more
Growth of Wide Band-gap Complex Oxides on GaN by Molecular-Beam Epitaxy.
Conference
·
Mon Feb 01 00:00:00 EST 2010
·
OSTI ID:1244879
+2 more