Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures
Patent
·
OSTI ID:1240427
Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 9,276,382
- Application Number:
- 14/624,074
- OSTI ID:
- 1240427
- Resource Relation:
- Patent File Date: 2015 Feb 17
- Country of Publication:
- United States
- Language:
- English
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